{"id":201,"date":"2022-03-23T08:06:28","date_gmt":"2022-03-23T08:06:28","guid":{"rendered":"http:\/\/semicon2.semicon.hiroshima-u.ac.jp\/?page_id=201"},"modified":"2026-02-17T06:07:00","modified_gmt":"2026-02-17T06:07:00","slug":"%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"https:\/\/semicon.hiroshima-u.ac.jp\/?page_id=201","title":{"rendered":"\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"\n

\u5b66\u4f1a\u767a\u8868\u306f\u3053\u3061\u3089\u3092\u30af\u30ea\u30c3\u30af<\/a><\/p>\n\n\n\n

Paper<\/p>\n\n\n\n

2025<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Ultra-Low-Temperature Formation of High-Quality SiO2 via Interface-Driven Self Organization of Polysilazane Induced by Atmospheric Pressure Plasma Jet Irradiation<\/td>K. Sakaike, J. Yu, S. Higashi<\/td>AIP Advances<\/td>15<\/td>105305-1 - 105305-6<\/td>2025<\/td><\/tr>
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2024<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement<\/td>K. Matsumoto, H. Kato, J. Yu, H. Hanafusa, and S. Higashi<\/td>Appl. Phys. Express.<\/td>1<\/strong>8<\/td>016503-1 - 016503-4<\/td>2024<\/td><\/tr>
Silica conversion of polysilazanes by low-temperature plasma jet generated from Ar and water-vapor mixed gas<\/td>K. Sakaike, S. Higashi<\/td>AIP Advances<\/td>14<\/td>115205-1 - 115205-5<\/td>2024<\/td><\/tr>
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2023<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Extraction of interfacial thermal resistance across an organic\/semiconductor interface using optical\u2013interference contactless thermometry<\/td>Jiawen Yu, Hiroaki Hanafusa, and S. Higashi<\/td>Appl. Phys. Express.<\/td>17<\/strong><\/td>036502-1 - 036502-4<\/td>2023<\/td><\/tr>
Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)<\/td>Jiawen Yu, Hiroaki Hanafusa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>62<\/strong><\/td>SC1075-1 - SC1075- 8<\/td>2023<\/td><\/tr>
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2022<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition<\/td>T. Nojima, H. Hanafusa, T. Sato, S. Hayashi, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>61<\/strong><\/td>SI1010-1 - SI1010- 6<\/td>2022<\/td><\/tr>
Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation<\/td>T. Sato, H. Hanafusa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>61<\/strong><\/td>SC1011-1 - SC1011- 6<\/td>2022<\/td><\/tr>
Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging<\/td>Keiya Fujimoto, Hiroaki Hanafusa, Takuma Sato  and Seiichiro Higashi<\/td>Applied Physics Express<\/a><\/td>15<\/strong> <\/td>026502-1 - 026502-4<\/td>2022<\/td><\/tr>
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2021<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)<\/span><\/a><\/td>Seiichiro Higashi, Kotaro Matsuguchi, Takuma Sato and Hiroaki Hanafusa<\/td>2021 ECS Trans<\/em><\/a><\/td>104<\/strong> <\/td>63-68<\/td>2021<\/td><\/tr>
Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on Si<\/td>T. Ishibe, J. Chikada, T. Terada, Y. Komatsubara, R. Kitaura, S. Yachi, Y. Yamashita, T. Sato, T. Suemasu, and Y. Nakamura<\/td>Appl. Phys. Lett.<\/td>119<\/strong><\/td>141603-1 \u2013 141603-6<\/td>2021<\/td><\/tr>
Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication<\/td>H. T. K. Nguyen, H. Hanafusa, R. Kawakita, K. Segawa, T. Sato S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>60<\/strong><\/td>105502-1 - 105502-7<\/td>2021<\/td><\/tr>
Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam<\/a><\/td>Kazuki Segawa, Hiroaki Hanafusa, Yuri Mizukawa and Seiichiro Higashi<\/td>Jpn. J. Appl. Phys.<\/td>59<\/strong><\/td>SJJF01-1 - SJJF01-6<\/td>2021<\/td><\/tr>
Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet<\/td>H. T. K. NGUYEN, H. Hanafusa, Y. Mizukawa, S. Hayashi, S. Higashi<\/td> Materials Science in Semiconductor Processing<\/td>121<\/strong><\/td>105357-1 - 105357-9<\/td>2021<\/td><\/tr>
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2020<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing<\/td>A. Kameda, Y. Mizukawa, H. Hanafusa, and S. Higashi<\/td>J. Appl. Phys.<\/td>127<\/strong><\/td>203302-1 - 203302-9<\/td>2020<\/td><\/tr>
Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopy<\/td>H. Hanafusa, D. Todo, and S. Higashi<\/td>Surface Science<\/td>696<\/strong><\/td>121592-1 - 121592-5<\/td>2020<\/td><\/tr>
Development of high yield layer transfer process of single crystalline silicon thin films on plastic substrate and its application to multi-functional devices integration<\/td>T. Hirano, F. Kondo, S. Nagasawa, H. Hanafusa, Y. Mizukawa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>59<\/strong><\/td>SGGJ02-1 - SGGJ02-8<\/td>2020<\/td><\/tr>
In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation<\/td>Y. Mizukawa, A. Kameda, H. Hanafusa, and S. Higashi<\/td>Appl. Phys. Express<\/td>13<\/strong><\/td>015507-1 - 015507-5<\/td>2020<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2019<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer<\/td>R. Mizukami, T. Yamashita, H. Hanafusa, and S. Higashi<\/td>IEEE J. Electron Dev. Soc.<\/td>7<\/strong><\/strong><\/td>943-948<\/td>2019<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2018<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect<\/td>H. Hanafusa, R. Nakashima, W. Nakano, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>57<\/strong><\/td>06JH01-1 - 06JH01-4<\/td>2018<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2017<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films<\/td>R. Nakashima, R. Shin, H. Hanafusa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>56<\/strong><\/strong><\/td>06HE05-1 - 06HE05-4<\/td>2017<\/td><\/tr>
High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet<\/td>H. Hanafusa, R. Ishimaru, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>56<\/strong><\/td>040304-1 - 040304-3<\/td>2017<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2015<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass<\/td>M. Akazawa, K. Sakaike, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>54<\/strong><\/td>086503-1 - 086503-7<\/td>2015<\/td><\/tr>
High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer<\/td>Keisuke Maruyama, Hiroaki Hanafusa, Ryuhei Ashihara, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi<\/td>Jpn. J. Appl. Phys.<\/td>54<\/strong><\/strong><\/td>06GC01-1 - 06GC01-8<\/td>2015<\/td><\/tr>
Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis<\/td>Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi<\/td>Mat. Sci. Forum<\/td>821<\/strong><\/td>391-394<\/td>2015<\/td><\/tr>
Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates<\/td>K. Sakaike, M. Akazawa, A. Nakagawa and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>54<\/strong><\/td>04DA08-1 - 04DA08-5<\/td>2015<\/td><\/tr>
Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate<\/td>K. Tanaka, S. Hayashi, S. Morisaki, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>54<\/strong><\/td>01AE05-1 - 01AE05-5<\/td>2015<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2014<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips<\/td>S. Morisaki, S. Hayashi, Y. Fujita, and S. Higashi<\/td>J. Display Technol.<\/td>10<\/strong><\/td>950-955<\/td>2014<\/td><\/tr>
Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique<\/td>K. Sakaike, M. Akazawa, A. Nakagawa, and S. Higashi<\/td>ECS Trans.<\/td>64<\/strong><\/td>17-22<\/td>2014<\/td><\/tr>
Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics<\/td>S. Morisaki, S. Hayashi, S. Yamamoto, T. Nakatani, and S. Higashi<\/td>ECS Trans.<\/td>64<\/strong><\/td>23-29<\/td>2014<\/td><\/tr>
Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)<\/td>H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi<\/td>ECS Trans.<\/td>64<\/strong><\/td>423-429<\/td>2014<\/td><\/tr>
Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique<\/td>M. Akazawa, K. Sakaike, S. Nakamura, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>53<\/strong><\/td>108002-1 - 108002-3<\/td>2014<\/td><\/tr>
A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser<\/td>K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>53<\/strong><\/td>040303-1 - 040303-4<\/td>2014<\/td><\/tr>
Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer<\/td>H. Hanafusa, A. Ohta, R. Ashihara, K. Maruyama, T. Mizuno, S. Hayashi, H. Murakami, and S. Higashi<\/td>Mat. Sci. Forum<\/td>778-780<\/strong><\/td>649-652<\/td>2014<\/td><\/tr>
Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation<\/td>S. Hayashi, S. Morisaki, T. Kamikura, S. Yamamoto, K. Sakaike, M. Akazawa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>53<\/strong><\/td>03DG02-1 - 03DG02-6<\/td>2014<\/td><\/tr>
Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force<\/td>K. Sakaike, S. Nakamura, M. Akazawa, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>53<\/strong><\/td>018004-1 - 018004-3<\/td>2014<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2013<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force<\/td>K. Sakaike, M. Akazawa, S. Nakamura and S. Higashi<\/td>Appl. Phys. Lett.<\/td>103<\/strong><\/td>233510-1 - 233510-4<\/td>2013<\/td><\/tr>
Highly-Crystallized Ge:H Film Growth from GeH4<\/sub> Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots<\/td>K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, and S.\u3000Miyazak<\/td>Jpn. J. Appl. Phys.<\/td>52<\/strong><\/td>11NA04-1 - 11NA04-3<\/td>2013<\/td><\/tr>
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes<\/td>A. Ohta, M. Fukushima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>52<\/strong><\/td>11NJ06-1 - 11NJ06-5<\/td>2013<\/td><\/tr>
Resistive Switching Properties of SiOx<\/sub>\/TiO2<\/sub> Multi-Stack in Ti-electrode MIM Diodes<\/td>A. Ohta, K. Makihara, M. Fukushima, H. Murakami, S. Higashi, and S. Miyazaki<\/td>ECS Trans.<\/td>58<\/strong><\/td>293-300<\/td>2013<\/td><\/tr>
Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabricatio<\/td>K. Sakaike, Y. Kobayashi, S. Nakamura, S. Hayashi, M. Akazawa, S. Morisaki, M. Ikeda, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>52<\/strong><\/td>05EC01-1 - 05EC01-6<\/td>2013<\/td><\/tr>
Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films<\/td>S. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>52<\/strong><\/td>05EE02-1 - 05EE02-6<\/td>2013<\/td><\/tr>
Evaluation of Chemical Composition and Bonding Features of Pt\/SiOx<\/sub>\/Pt MIM Diodes and Its Impact on Resistance Switching Behavior<\/td>A. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki<\/td>IEICE Trans. on Electron.<\/td>E96-C<\/strong><\/td>702-707<\/td>2013<\/td><\/tr>
Control of Interfacial Reaction of HfO2 <\/sub>\/Ge Structure by Insertion of Ta Oxide Layer<\/td>K. Hashimoto, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki<\/td>IEICE Trans. on Electron.<\/td>E96-C<\/strong><\/td>674-679<\/td>2013<\/td><\/tr>
XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)<\/td>A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>38<\/strong><\/td>353-357<\/td>2013<\/td><\/tr>
Determination of Energy Band Alignment in Ultrathin Hf-based Oxide\/Pt System<\/td>A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki<\/td>J. Phys. Conf. Ser.<\/td>417<\/strong><\/td>012012-1 - 012012-6<\/td>2013<\/td><\/tr>
Kinetics of thermally oxidation of Ge(100) surface<\/td>S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi, and S. Miyazaki<\/td>J. Phys, Conf. Ser.<\/td>417<\/strong><\/td>012014-1 - 012014-6<\/td>2013<\/td><\/tr>
Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods<\/td>K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi, and S. Miyazaki<\/td>J. Phys, Conf. Ser.<\/td>417<\/strong><\/td>012013-1 - 012013-6<\/td>2013<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2012<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation<\/td>S. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, H. Hanafusa, and S. Higashi<\/td>Appl. Phys. Lett.<\/td>101<\/strong><\/td>172111-1 - 172111-4<\/td>2012<\/td><\/tr>
Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks<\/td>Y. Fujita, S. Hayashi, K. Sakaike, and S. Higashi<\/td>ECS Trans.<\/td>50<\/strong><\/td>29-34<\/td>2012<\/td><\/tr>
Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation<\/td>K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, M. Ikeda and S. Higashi<\/td>ECS Trans.<\/td>50<\/strong><\/td>43-48<\/td>2012<\/td><\/tr>
Control of Schottky Barrier Height at Al\/p-Ge Junctions by Ultrathin Layer Insertion<\/td>A. Ohta, M. Matsui, H. Murakami, S. Higashi, and S. Miyazaki<\/td>ECS Trans.<\/td>50<\/strong><\/td>449-457<\/td>2012<\/td><\/tr>
Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes<\/td>A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>51<\/strong><\/td>06FF02-1 - 06FF02-6<\/td>2012<\/td><\/tr>
Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation<\/td>Y. Kobayashi, K. Sakaike, S. Nakamura, M. Ikeda, A. Ohta, and S. Higashi<\/td>Mat. Res. Soc.Symp.Proc.<\/td>1426<\/strong><\/td>275-280<\/td>2012<\/td><\/tr>
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering<\/td>A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E95-C<\/strong><\/td>879-884<\/td>2012<\/td><\/tr>
Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy<\/td>H. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, and Y. Suda<\/td>Jpn. J. Appl. Phys.<\/td>51<\/strong><\/td>055502-1 - 055502-4<\/td>2012<\/td><\/tr>
Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique<\/td>Y. Fujita, S. Hayashi, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>51<\/strong><\/td>02BH05-1 - 02BH05-5<\/td>2012<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2011<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide<\/td>A. Ohta, T. Fujioka, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>10PE01-1 - 10PE01-6<\/td>2011<\/td><\/tr>
Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed Oxide<\/td>A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>10PH02-1 - 10PH02-6<\/td>2011<\/td><\/tr>
Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory<\/td>K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>08KE06-1 - 08KE06-4<\/td>2011<\/td><\/tr>
Characterization of chemical bonding features at metal\/GeO2 Interfaces by X-ray photoelectron spectroscopy<\/td>M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi, and S. Miyazaki<\/td>Microelec. Eng.<\/td>88<\/strong><\/td>1549-1552<\/td>2011<\/td><\/tr>
Impact of insertion of ultrathin TaOx layer at the Pt\/TiO2 interface on resistive switching characteristics<\/td>G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, and S. Miyazaki<\/td>Microelec. Eng<\/td>88<\/strong><\/td>1152-1154<\/td>2011<\/td><\/tr>
Characterization of Mg Diffusion into HfO2\/SiO2<\/sub>\/Si(100) Stacked Structures and Its Impact on Detect State Densities<\/td>A. Ohta, D. Kanme, H. Murakaimi, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E94-C<\/strong><\/td>717-723<\/td>2011<\/td><\/tr>
Impact of Annealing Ambience on Resistive Switching in Pt\/TiO2<\/sub>\/Pt Structure<\/td>G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E94-C<\/strong><\/td>699-704<\/td>2011<\/td><\/tr>
The Impact of Y Addition into TiO2 <\/sub>on Electronic States and Resistive Switching Characteristics<\/td>A. Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>06GG01-1 - 06GG01-5<\/td>2011<\/td><\/tr>
Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation<\/td>K. Matsumoto, A. Ohta, S. Miyazaki, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>04DA07-1 - 04DA07-4<\/td>2011<\/td><\/tr>
Native Oxidation Growth on Ge (111) and (100) Surfaces<\/td>S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>04DA12-1 - 04DA12-4<\/td>2011<\/td><\/tr>
Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication<\/td>S. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>50<\/strong><\/td>03CB10-1 - 03CB10-8<\/td>2011<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2010<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals<\/td>H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. Miyazaki<\/td>ECS Trans.<\/td>33<\/strong><\/td>253-262<\/td>2010<\/td><\/tr>
Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid<\/td>T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa, and S. Miyazaki<\/td>ECS Trans.<\/td>33<\/strong><\/td>165-170<\/td>2010<\/td><\/tr>
Formation of High-Quality SiO2<\/sub> and SiO2<\/sub>\/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing<\/td>Y. Hiroshige, S. Higashi, K. Matsumoto, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>49<\/strong><\/td>08JJ01-1 - 08JJ01-4<\/td>2010<\/td><\/tr>
Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication<\/td>S. Hayashi, S. Higashi, H. Murakami, and S. Miyazaki<\/td>Appl. Phys. Express<\/td>3<\/strong><\/td>061401-1 - 061401-3<\/td>2010<\/td><\/tr>
Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation<\/td>K. Matsumoto, S. Higashi, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>49<\/strong><\/td>04DA02-1 - 04DA02-4<\/td>2010<\/td><\/tr>
Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique<\/td>S. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>49<\/strong><\/td>03CA08-1 - 03CA08-4<\/td>2010<\/td><\/tr>
Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure<\/td>K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>J. Optoelectronics and Advanced Materials<\/td>12<\/strong><\/td>626-630<\/td>2010<\/td><\/tr>
Effect of chemical composition of SiOx films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiation<\/td>T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige, and S. Miyazaki<\/td>Phys. Status Solidi<\/td>C7<\/strong><\/td>732-734<\/td>2010<\/td><\/tr>
<\/td><\/td><\/td><\/td><\/td><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2009<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories<\/td>K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E92-C<\/strong><\/td>616-619<\/td>2009<\/td><\/tr>
Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx\/HfO2<\/sub> Stack Structure Formed on Thermally-grown SiO2<\/sub>\/Si(100)<\/td>A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Microelec. Eng.<\/td>84<\/strong><\/td>1650-1653<\/td>2009<\/td><\/tr>
Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM\/Kelvin Probe Technique<\/td>K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, and S. Miyazaki<\/td>Trans. MRS-J.<\/td>34<\/strong><\/td>309-312<\/td>2009<\/td><\/tr>
Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2<\/sub> surface<\/td>S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, and S. Miyazaki<\/td>ECS Trans.<\/td>19<\/strong><\/td>35-43<\/td>2009<\/td><\/tr>
Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power- Density Thermal Plasma Jet Irradiation and Its application to UltraShallow Junction Formation<\/td>H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>48<\/strong><\/td>04C011-1 - 04C011-4<\/td>2009<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2008<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4<\/td>T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>517<\/strong><\/td>216-218<\/td>2008<\/td><\/tr>
Formation of Si Nanocrystals in SiOx<\/sub> Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory<\/td>T. Okada, S. Higashi, H. Kaku, H. Furukawa, and S. Miyazaki<\/td>ECS Trans.<\/td>16<\/strong><\/td>177-182<\/td>2008<\/td><\/tr>
Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2<\/sub><\/td>K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>ECS. Trans.<\/td>16<\/strong><\/td>255-260<\/td>2008<\/td><\/tr>
Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique<\/td>T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, and M. Kondo<\/td>Jpn. J. Appl. Phys.<\/td>47<\/strong><\/td>6949-6952<\/td>2008<\/td><\/tr>
Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics<\/td>K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>517<\/strong><\/td>306-308<\/td>2008<\/td><\/tr>
In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing<\/td>H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki<\/td>ECS Trans.<\/td>13<\/strong><\/td>31-36<\/td>2008<\/td><\/tr>
Self-Assembling Formation of Ninanodots on SiO2<\/sub> Induced by Remote H2<\/sub>-plasma Treatment and Their Electrical Charging Characteristics<\/td>K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>47<\/strong><\/td>3099-3102<\/td>2008<\/td><\/tr>
Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases<\/td>R. Matsumoto, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>47<\/strong><\/td>3103-3106<\/td>2008<\/td><\/tr>
In-situ<\/em> Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation<\/td>H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>47<\/strong><\/td>2460-2463<\/td>2008<\/td><\/tr>
Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jet<\/td>T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki<\/td>Thin Solid Films<\/td>516<\/strong><\/td>3680-3683<\/td>2008<\/td><\/tr>
Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing<\/td>K. Sakaike, S. Higashi, H. Kaku, T. Sakata, H. Murakami, and S. Miyazaki<\/td>Thin Solid Films<\/td>516<\/strong><\/td>3595-3600<\/td>2008<\/td><\/tr>
Nucleation Study of Hydrogenated Microcrystalline Silicon (mc-Si:H) Films Deposited by VHF-ICP<\/td>T. Karakawa, S. Higashi, H. Murakami, and S. Miyazaki<\/td>Thin Solid Films<\/td>516<\/strong><\/td>3497-3501<\/td>2008<\/td><\/tr>
Growth of Si crystalline in SiOx<\/sub> films induced by millisecond rapid thermal annealing using thermal plasma jet<\/td>T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, and S. Miyazaki<\/td>Solid-State Electronics<\/td>52<\/strong><\/td>377-380<\/td>2008<\/td><\/tr>
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots \/ SiO2<\/sub> Structure as Evaluated by AFM\/KFM<\/td>K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E91-C<\/strong><\/td> 712-715<\/td>2008<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2007<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots<\/td>J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Solid State Phenomena<\/td>121-123<\/strong><\/td>557-560<\/td>2007<\/td><\/tr>
Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM\/Kelvin Probe Technique<\/td>R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Mat. Sci. Forum<\/td>561-565<\/strong><\/td>1213-1216<\/td>2007<\/td><\/tr>
Characterization of Chemical Bonding Features and Defect State Density in HfSiOx<\/sub>Ny\/SiO2<\/sub> Gate Stack<\/td>A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara<\/td>Microelec. Eng<\/td>84<\/strong><\/td>2386-2389.<\/td>2007<\/td><\/tr>
High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4<\/sub> + H2<\/sub><\/td>T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki<\/td>Mat. Sci. Forum<\/td>561-565<\/strong><\/td>1209-1212<\/td>2007<\/td><\/tr>
Electrical Characteristics of Lightly-Doped Si Films Crsytallized by Thermal Plasma Jet Irradiation<\/td>T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki, and T. Sameshima<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>32<\/strong><\/td>465-468<\/td>2007<\/td><\/tr>
Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation<\/td>K. Sakaike, S. Higashi, H. Kaku, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>46<\/strong><\/td>4897-4900<\/td>2007<\/td><\/tr>
Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet<\/td>T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki<\/td>Thin Solid Films<\/td>515<\/strong><\/td>4897-4900<\/td>2007<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2006<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Pulsed Laser Annealing of Thin Silicon Films<\/td>T. Sameshima, H. Watakabe, N. Andoh, and S. Higashi<\/td>Jpn. J. Appl. Phys.<\/td>45<\/strong><\/td>2437-2440<\/td>2006<\/td><\/tr>
Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation<\/td>S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>45<\/strong><\/td>4313-4320<\/td>2006<\/td><\/tr>
Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate<\/td>T. Okada, S. Higashi, H. Kaku, H. Murakami, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>45<\/strong><\/td>4355-4357<\/td>2006<\/td><\/tr>
Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique<\/td>H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh and T. Sameshima<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>30<\/strong><\/td>283-286<\/td>2006<\/td><\/tr>
In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge\/Si Stacked Structure<\/td>A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, and T. Sameshima<\/td>Thin Solid Films<\/td>508<\/strong><\/td> 53-56<\/td>2006<\/td><\/tr>
Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM\/Kelvin Probe<\/td>K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>508<\/strong><\/td>186-189<\/td>2006<\/td><\/tr>
Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM\/Kelvin Probe Technique<\/td>J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>508<\/strong><\/td>190-194<\/td>2006<\/td><\/tr>
Study of Charged States of Si Quantum Dots with Ge Core<\/td>K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki<\/td>Electrochem. Soc. Trans.<\/td>3<\/strong><\/td>257-262<\/td>2006<\/td><\/tr>
Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices<\/td>K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>31<\/strong><\/td>133-136<\/td>2006<\/td><\/tr>
Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs<\/td>T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>31<\/strong><\/td>137-140<\/td>2006<\/td><\/tr>
Characterization of FUSI-PtSi Formed on Ultrathin HfO2<\/sub>\/Si(100) by Photoelectron Spectroscopy<\/td>Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>31<\/strong><\/td>145-148<\/td>2006<\/td><\/tr>
Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3<\/sub> Ambience<\/td>H. Nakagawa, A. Ohta, M. Taira, H. Abe. H. Murakami, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc.<\/td>31<\/strong><\/td>153-156<\/td>2006<\/td><\/tr>
Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties<\/td>H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi, and S. Miyazaki<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>31<\/strong><\/td>157-160<\/td>2006<\/td><\/tr>
Photoemission Study of Ultrathin HfSiON\/Si(100) Systems<\/td>A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>31<\/strong><\/td>125-128<\/td>2006<\/td><\/tr>
Photoemission Study of Ultrathin GeO2<\/sub>\/Ge Heterostructures Formed by UV-O3<\/sub> Oxidation<\/td>A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki<\/td>J. of Surf. Sci. and Nanotech.<\/td>4<\/strong><\/td>174-179<\/td>2006<\/td><\/tr>
Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2<\/sub>-Diluted GeH4<\/sub><\/td>T. Sakata, K. Makihara, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>515<\/strong><\/td>4971-4974<\/td>2006<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2005<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Electrical Characterization of HfAlOx\/SiON Dielectric Gate Capacitors<\/td>Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, and K. Torii<\/td>Trans. Mat. Res. Soc. Jpn.<\/td>30<\/strong><\/td>Trans. Mat. Res. Soc. Jpn.<\/td>2005<\/td><\/tr>
Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor<\/td>S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando, and T. Sameshima<\/td>Jpn. J. Appl. Phys.<\/td>44<\/strong><\/td>L108-L110<\/td>2005<\/td><\/tr>
Crystallization of Si films on glass substrate using thermal plasma jet<\/td>S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, and S. Miyazaki<\/td>Thin Solid Films<\/td>487<\/strong><\/td>122-125<\/td>2005<\/td><\/tr>
Pulsed Laser Crystallization of Very Thin Silicon Films<\/td>T. Sameshima, H. Watakabe, N. Andoh and S. Higashi<\/td>Thin Solid films<\/td>487<\/strong><\/td>63-66<\/td>2005<\/td><\/tr>
A new crystallization technique of Si flms on glass substrate using thermal plasma Jet<\/td>H. Kaku, S. Higashi, H. Taniguchi, H. Murakami, and S. Miyazaki<\/td>Appl. Surface Sci.<\/td>244<\/strong><\/td>8-11<\/td>2005<\/td><\/tr>
Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment<\/td>K. Makihara, H. Deki, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Appl. Surface Sci.<\/td>244<\/strong><\/td>75-78<\/td>2005<\/td><\/tr>
Influence of substrate dc bias on crystallinity of silicon Films grown at a high rate from inductively-coupled plasma CVD<\/td>N. Kosku, H. Murakami, S. Higashi and S. Miyazaki<\/td>Appl. Surface Sci.<\/td>244<\/strong><\/td>39-42<\/td>2005<\/td><\/tr>
Formation of Microcrystalline Germanium (\u03bcc-Ge:H) Films from Inductively-Coupled Plasma CVD<\/td>Y. Okamoto, K. Makihara, S. Higashi and S. Miyazaki<\/td>Appl. Surface Sci.<\/td>244<\/strong><\/td>12-15<\/td>2005<\/td><\/tr>
Characterization of Atom Diffusion in Polycrystalline Si\/SiGe\/Si Stacked Gate<\/td>H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E88-C<\/strong><\/td>646-650<\/td>2005<\/td><\/tr>
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX<\/sub>\/SiON Dielectric Gate Stack<\/td>Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, and Y. Nara<\/td>Electrochem. Soc. Trans.<\/td>1<\/strong><\/td>163-172<\/td>2005<\/td><\/tr>
Characterization of Germanium Nanocrystallites Grown on SiO2<\/sub> by a Conductive AFM Probe Technique<\/td>K. Makihara, Y. Okamoto, H. Murakami, S. Higashi, and S. Miyazaki<\/td>IEICE Trans. Electron.<\/td>E88-C<\/strong><\/td>705-708<\/td>2005<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

2004<\/p>\n\n\n\n

Title<\/td>Authors<\/td>Journal<\/td>Volume<\/td>Pages<\/td>Year<\/td><\/tr>
Single-grain Si TFTs with ECR-PECVD gate SiO2<\/sub><\/td>R. Ishihara, Y. Hiroshima, D. Abe, B.D. van Dijk, P.C. van der Wilt, S. Higashi, S. Inoue, T. Shimoda, J.W. Metselaar, and C.I.M. Beenakker<\/td>IEEE Trans. Electron Devices<\/td>51<\/strong><\/td>500-502<\/strong><\/td>2004<\/td><\/tr>
Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3<\/sub>-nitrided Si(100)<\/td>H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>43<\/strong><\/td>7890-7894<\/td>2004<\/td><\/tr>
Impact of Rapid Thermal O2<\/sub> Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)<\/td>A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii, and S. Miyazaki<\/td>Jpn. J. Appl. Phys.<\/td>43<\/strong><\/td>7831-7836<\/td>2004<\/td><\/tr>
Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe<\/td>K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki<\/td>Thin Solid Films<\/td>457<\/strong><\/td>103-108<\/td>2004<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

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