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Paper

2022

TitleAuthorsJournalVolumePagesYear
Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor depositionT. Nojima, H. Hanafusa, T. Sato, S. Hayashi, and S. HigashiJpn. J. Appl. Phys.61SI1010-1 - SI1010- 62022
Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiationT. Sato, H. Hanafusa, and S. HigashiJpn. J. Appl. Phys.61SC1011-1 - SC1011- 62022
Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imagingKeiya Fujimoto, Hiroaki Hanafusa, Takuma Sato  and Seiichiro HigashiApplied Physics Express15 026502-1 - 026502-42022

2021

TitleAuthorsJournalVolumePagesYear
Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)Seiichiro Higashi, Kotaro Matsuguchi, Takuma Sato and Hiroaki Hanafusa2021 ECS Trans104 63-682021
Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on SiT. Ishibe, J. Chikada, T. Terada, Y. Komatsubara, R. Kitaura, S. Yachi, Y. Yamashita, T. Sato, T. Suemasu, and Y. NakamuraAppl. Phys. Lett.119141603-1 – 141603-62021
Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabricationH. T. K. Nguyen, H. Hanafusa, R. Kawakita, K. Segawa, T. Sato S. HigashiJpn. J. Appl. Phys.60105502-1 - 105502-72021
Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beamKazuki Segawa, Hiroaki Hanafusa, Yuri Mizukawa and Seiichiro HigashiJpn. J. Appl. Phys.59SJJF01-1 - SJJF01-62021
Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jetH. T. K. NGUYEN, H. Hanafusa, Y. Mizukawa, S. Hayashi, S. Higashi Materials Science in Semiconductor Processing121105357-1 - 105357-92021

2020

TitleAuthorsJournalVolumePagesYear
Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processingA. Kameda, Y. Mizukawa, H. Hanafusa, and S. HigashiJ. Appl. Phys.127203302-1 - 203302-92020
Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopyH. Hanafusa, D. Todo, and S. HigashiSurface Science696121592-1 - 121592-52020
Development of high yield layer transfer process of single crystalline silicon thin films on plastic substrate and its application to multi-functional devices integrationT. Hirano, F. Kondo, S. Nagasawa, H. Hanafusa, Y. Mizukawa, and S. HigashiJpn. J. Appl. Phys.59SGGJ02-1 - SGGJ02-82020
In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiationY. Mizukawa, A. Kameda, H. Hanafusa, and S. HigashiAppl. Phys. Express13015507-1 - 015507-52020

2019

TitleAuthorsJournalVolumePagesYear
Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer TransferR. Mizukami, T. Yamashita, H. Hanafusa, and S. HigashiIEEE J. Electron Dev. Soc.7943-9482019

2018

TitleAuthorsJournalVolumePagesYear
Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effectH. Hanafusa, R. Nakashima, W. Nakano, and S. HigashiJpn. J. Appl. Phys.5706JH01-1 - 06JH01-42018

2017

TitleAuthorsJournalVolumePagesYear
Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon filmsR. Nakashima, R. Shin, H. Hanafusa, and S. HigashiJpn. J. Appl. Phys.5606HE05-1 - 06HE05-42017
High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jetH. Hanafusa, R. Ishimaru, and S. HigashiJpn. J. Appl. Phys.56040304-1 - 040304-32017

2015

TitleAuthorsJournalVolumePagesYear
Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glassM. Akazawa, K. Sakaike, and S. HigashiJpn. J. Appl. Phys.54086503-1 - 086503-72015
High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC waferKeisuke Maruyama, Hiroaki Hanafusa, Ryuhei Ashihara, Shohei Hayashi, Hideki Murakami, and Seiichiro HigashiJpn. J. Appl. Phys.5406GC01-1 - 06GC01-82015
Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern AnalysisHiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro HigashiMat. Sci. Forum821391-3942015
Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substratesK. Sakaike, M. Akazawa, A. Nakagawa and S. HigashiJpn. J. Appl. Phys.5404DA08-1 - 04DA08-52015
Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrateK. Tanaka, S. Hayashi, S. Morisaki, and S. HigashiJpn. J. Appl. Phys.5401AE05-1 - 01AE05-52015

2014

TitleAuthorsJournalVolumePagesYear
Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si StripsS. Morisaki, S. Hayashi, Y. Fujita, and S. HigashiJ. Display Technol.10950-9552014
Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer TechniqueK. Sakaike, M. Akazawa, A. Nakagawa, and S. HigashiECS Trans.6417-222014
Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT CharacteristicsS. Morisaki, S. Hayashi, S. Yamamoto, T. Nakatani, and S. HigashiECS Trans.6423-292014
Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. HigashiECS Trans.64423-4292014
Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer techniqueM. Akazawa, K. Sakaike, S. Nakamura, and S. HigashiJpn. J. Appl. Phys.53108002-1 - 108002-32014
A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laserK. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, and S. HigashiJpn. J. Appl. Phys.53040303-1 - 040303-42014
Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon InterlayerH. Hanafusa, A. Ohta, R. Ashihara, K. Maruyama, T. Mizuno, S. Hayashi, H. Murakami, and S. HigashiMat. Sci. Forum778-780649-6522014
Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiationS. Hayashi, S. Morisaki, T. Kamikura, S. Yamamoto, K. Sakaike, M. Akazawa, and S. HigashiJpn. J. Appl. Phys.5303DG02-1 - 03DG02-62014
Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus forceK. Sakaike, S. Nakamura, M. Akazawa, and S. HigashiJpn. J. Appl. Phys.53018004-1 - 018004-32014

2013

TitleAuthorsJournalVolumePagesYear
Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus forceK. Sakaike, M. Akazawa, S. Nakamura and S. HigashiAppl. Phys. Lett.103233510-1 - 233510-42013
Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni NanodotsK. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, and S. MiyazakJpn. J. Appl. Phys.5211NA04-1 - 11NA04-32013
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based ElectrodesA. Ohta, M. Fukushima, K. Makihara, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5211NJ06-1 - 11NJ06-52013
Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM DiodesA. Ohta, K. Makihara, M. Fukushima, H. Murakami, S. Higashi, and S. MiyazakiECS Trans.58293-3002013
Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor FabricatioK. Sakaike, Y. Kobayashi, S. Nakamura, S. Hayashi, M. Akazawa, S. Morisaki, M. Ikeda, and S. HigashiJpn. J. Appl. Phys.5205EC01-1 - 05EC01-62013
Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon FilmsS. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, and S. HigashiJpn. J. Appl. Phys.5205EE02-1 - 05EE02-62013
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching BehaviorA. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. MiyazakiIEICE Trans. on Electron.E96-C702-7072013
Control of Interfacial Reaction of HfO2 /Ge Structure by Insertion of Ta Oxide LayerK. Hashimoto, A. Ohta, H. Murakami, S. Higashi, S. MiyazakiIEICE Trans. on Electron.E96-C674-6792013
XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)A. Ohta, H. Murakami, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc. Jpn.38353-3572013
Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt SystemA. Ohta, H. Murakami, S. Higashi, and S. MiyazakiJ. Phys. Conf. Ser.417012012-1 - 012012-62013
Kinetics of thermally oxidation of Ge(100) surfaceS. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi, and S. MiyazakiJ. Phys, Conf. Ser.417012014-1 - 012014-62013
Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer MethodsK. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi, and S. MiyazakiJ. Phys, Conf. Ser.417012013-1 - 012013-62013

2012

TitleAuthorsJournalVolumePagesYear
Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiationS. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, H. Hanafusa, and S. HigashiAppl. Phys. Lett.101172111-1 - 172111-42012
Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit MasksY. Fujita, S. Hayashi, K. Sakaike, and S. HigashiECS Trans.5029-342012
Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser IrradiationK. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, M. Ikeda and S. HigashiECS Trans.5043-482012
Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer InsertionA. Ohta, M. Matsui, H. Murakami, S. Higashi, and S. MiyazakiECS Trans.50449-4572012
Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt ElectrodesA. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5106FF02-1 - 06FF02-62012
Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser IrradiationY. Kobayashi, K. Sakaike, S. Nakamura, M. Ikeda, A. Ohta, and S. HigashiMat. Res. Soc.Symp.Proc.1426275-2802012
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF SputteringA. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E95-C879-8842012
Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter EpitaxyH. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, and Y. SudaJpn. J. Appl. Phys.51055502-1 - 055502-42012
Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization TechniqueY. Fujita, S. Hayashi, and S. HigashiJpn. J. Appl. Phys.5102BH05-1 - 02BH05-52012

2011

TitleAuthorsJournalVolumePagesYear
X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge OxideA. Ohta, T. Fujioka, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5010PE01-1 - 10PE01-62011
Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed OxideA. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5010PH02-1 - 10PH02-62011
Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate MemoryK. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5008KE06-1 - 08KE06-42011
Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopyM. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi, and S. MiyazakiMicroelec. Eng.881549-15522011
Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristicsG. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, and S. MiyazakiMicroelec. Eng881152-11542011
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State DensitiesA. Ohta, D. Kanme, H. Murakaimi, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E94-C717-7232011
Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt StructureG. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E94-C699-7042011
The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching CharacteristicsA. Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5006GG01-1 - 06GG01-52011
Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet IrradiationK. Matsumoto, A. Ohta, S. Miyazaki, and S. HigashiJpn. J. Appl. Phys.5004DA07-1 - 04DA07-42011
Native Oxidation Growth on Ge (111) and (100) SurfacesS. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.5004DA12-1 - 04DA12-42011
Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor FabricationS. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.5003CB10-1 - 03CB10-82011

2010

TitleAuthorsJournalVolumePagesYear
Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and MetalsH. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. MiyazakiECS Trans.33253-2622010
Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge MicroliquidT. Matsumoto, S. Higashi, K. Makihara, M. Akazawa, and S. MiyazakiECS Trans.33165-1702010
Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization AnnealingY. Hiroshige, S. Higashi, K. Matsumoto, and S. MiyazakiJpn. J. Appl. Phys.4908JJ01-1 - 08JJ01-42010
Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor FabricationS. Hayashi, S. Higashi, H. Murakami, and S. MiyazakiAppl. Phys. Express3061401-1 - 061401-32010
Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet IrradiationK. Matsumoto, S. Higashi, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.4904DA02-1 - 04DA02-42010
Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization TechniqueS. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. MiyazakiJpn. J. Appl. Phys.4903CA08-1 - 03CA08-42010
Formation Mechanism of Metal nanodots Induced by Remote Plasma ExposureK. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi, and S. MiyazakiJ. Optoelectronics and Advanced Materials12626-6302010
Effect of chemical composition of SiOx films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiationT. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige, and S. MiyazakiPhys. Status SolidiC7732-7342010

2009

TitleAuthorsJournalVolumePagesYear
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS MemoriesK. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E92-C616-6192009
Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100)A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. MiyazakiMicroelec. Eng.841650-16532009
Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe TechniqueK. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, and S. MiyazakiTrans. MRS-J.34309-3122009
Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 surfaceS. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, and S. MiyazakiECS Trans.1935-432009
Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power- Density Thermal Plasma Jet Irradiation and Its application to UltraShallow Junction FormationH. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.4804C011-1 - 04C011-42009

2008

TitleAuthorsJournalVolumePagesYear
Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. MiyazakiThin Solid Films517216-2182008
Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate MemoryT. Okada, S. Higashi, H. Kaku, H. Furukawa, and S. MiyazakiECS Trans.16177-1822008
Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, and S. MiyazakiECS. Trans.16255-2602008
Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization TechniqueT. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, and M. KondoJpn. J. Appl. Phys.476949-69522008
Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging CharacteristicsK. Makihara, M. Ikeda, S. Higashi, and S. MiyazakiThin Solid Films517306-3082008
In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal AnnealingH. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. MiyazakiECS Trans.1331-362008
Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging CharacteristicsK. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.473099-31022008
Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate BiasesR. Matsumoto, M. Ikeda, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.473103-31062008
In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet IrradiationH. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.472460-24632008
Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jetT. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. MiyazakiThin Solid Films5163680-36832008
Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser AnnealingK. Sakaike, S. Higashi, H. Kaku, T. Sakata, H. Murakami, and S. MiyazakiThin Solid Films5163595-36002008
Nucleation Study of Hydrogenated Microcrystalline Silicon (mc-Si:H) Films Deposited by VHF-ICPT. Karakawa, S. Higashi, H. Murakami, and S. MiyazakiThin Solid Films5163497-35012008
Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jetT. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, and S. MiyazakiSolid-State Electronics52377-3802008
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO2 Structure as Evaluated by AFM/KFMK. Makihara, M. Ikeda, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E91-C 712-7152008

2007

TitleAuthorsJournalVolumePagesYear
Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum DotsJ. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, and S. MiyazakiSolid State Phenomena121-123557-5602007
Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe TechniqueR. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, and S. MiyazakiMat. Sci. Forum561-5651213-12162007
Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate StackA. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. NaraMicroelec. Eng842386-2389.2007
High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. MiyazakiMat. Sci. Forum561-5651209-12122007
Electrical Characteristics of Lightly-Doped Si Films Crsytallized by Thermal Plasma Jet IrradiationT. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki, and T. SameshimaTrans. Mat. Res. Soc. Jpn.32465-4682007
Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser IrradiationK. Sakaike, S. Higashi, H. Kaku, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.464897-49002007
Control of substrate surface temperature in millisecond annealing technique using thermal plasma jetT. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. MiyazakiThin Solid Films5154897-49002007

2006

TitleAuthorsJournalVolumePagesYear
Pulsed Laser Annealing of Thin Silicon FilmsT. Sameshima, H. Watakabe, N. Andoh, and S. HigashiJpn. J. Appl. Phys.452437-24402006
Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet IrradiationS. Higashi, H. Kaku, T. Okada, H. Murakami and S. MiyazakiJpn. J. Appl. Phys.454313-43202006
Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz SubstrateT. Okada, S. Higashi, H. Kaku, H. Murakami, and S. MiyazakiJpn. J. Appl. Phys.454355-43572006
Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion TechniqueH. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh and T. SameshimaTrans. Mat. Res. Soc. Jpn.30283-2862006
In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked StructureA. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, and T. SameshimaThin Solid Films508 53-562006
Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin ProbeK. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, and S. MiyazakiThin Solid Films508186-1892006
Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe TechniqueJ. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, and S. MiyazakiThin Solid Films508190-1942006
Study of Charged States of Si Quantum Dots with Ge CoreK. Makihara, M. Ikeda, S. Higashi, and S. MiyazakiElectrochem. Soc. Trans.3257-2622006
Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS DevicesK. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc. Jpn.31133-1362006
Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETsT. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc. Jpn.31137-1402006
Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron SpectroscopyY. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc. Jpn.31145-1482006
Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 AmbienceH. Nakagawa, A. Ohta, M. Taira, H. Abe. H. Murakami, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc.31153-1562006
Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical PropertiesH. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi, and S. MiyazakiTrans. Mat. Res. Soc. Jpn.31157-1602006
Photoemission Study of Ultrathin HfSiON/Si(100) SystemsA. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. NaraTrans. Mat. Res. Soc. Jpn.31125-1282006
Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 OxidationA. Ohta, H. Murakami, S. Higashi, and S. MiyazakiJ. of Surf. Sci. and Nanotech.4174-1792006
Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4T. Sakata, K. Makihara, S. Higashi, and S. MiyazakiThin Solid Films5154971-49742006

2005

TitleAuthorsJournalVolumePagesYear
Electrical Characterization of HfAlOx/SiON Dielectric Gate CapacitorsY. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, and K. ToriiTrans. Mat. Res. Soc. Jpn.30Trans. Mat. Res. Soc. Jpn.2005
Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film TransistorS. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando, and T. SameshimaJpn. J. Appl. Phys.44L108-L1102005
Crystallization of Si films on glass substrate using thermal plasma jetS. Higashi, H. Kaku, H. Taniguchi, H. Murakami, and S. MiyazakiThin Solid Films487122-1252005
Pulsed Laser Crystallization of Very Thin Silicon FilmsT. Sameshima, H. Watakabe, N. Andoh and S. HigashiThin Solid films48763-662005
A new crystallization technique of Si flms on glass substrate using thermal plasma JetH. Kaku, S. Higashi, H. Taniguchi, H. Murakami, and S. MiyazakiAppl. Surface Sci.2448-112005
Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma TreatmentK. Makihara, H. Deki, H. Murakami, S. Higashi, and S. MiyazakiAppl. Surface Sci.24475-782005
Influence of substrate dc bias on crystallinity of silicon Films grown at a high rate from inductively-coupled plasma CVDN. Kosku, H. Murakami, S. Higashi and S. MiyazakiAppl. Surface Sci.24439-422005
Formation of Microcrystalline Germanium (μc-Ge:H) Films from Inductively-Coupled Plasma CVDY. Okamoto, K. Makihara, S. Higashi and S. MiyazakiAppl. Surface Sci.24412-152005
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked GateH. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E88-C646-6502005
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate StackY. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, and Y. NaraElectrochem. Soc. Trans.1163-1722005
Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe TechniqueK. Makihara, Y. Okamoto, H. Murakami, S. Higashi, and S. MiyazakiIEICE Trans. Electron.E88-C705-7082005

2004

TitleAuthorsJournalVolumePagesYear
Single-grain Si TFTs with ECR-PECVD gate SiO2R. Ishihara, Y. Hiroshima, D. Abe, B.D. van Dijk, P.C. van der Wilt, S. Higashi, S. Inoue, T. Shimoda, J.W. Metselaar, and C.I.M. BeenakkerIEEE Trans. Electron Devices51500-5022004
Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100)H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi, and S. MiyazakiJpn. J. Appl. Phys.437890-78942004
Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii, and S. MiyazakiJpn. J. Appl. Phys.437831-78362004
Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting ProbeK. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, and S. MiyazakiThin Solid Films457103-1082004