Paper
2023
| Title | Authors | Journal | Volume | Pages | Year |
| Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical–interference contactless thermometry | Jiawen Yu, Hiroaki Hanafusa, and S. Higashi | Appl. Phys. Express. | 17 | 036502-1 - 036502-4 | 2023 |
| Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT) | Jiawen Yu, Hiroaki Hanafusa, and S. Higashi | Jpn. J. Appl. Phys. | 62 | SC1075-1 - SC1075- 8 | 2023 |
2022
| Title | Authors | Journal | Volume | Pages | Year |
| Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition | T. Nojima, H. Hanafusa, T. Sato, S. Hayashi, and S. Higashi | Jpn. J. Appl. Phys. | 61 | SI1010-1 - SI1010- 6 | 2022 |
| Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation | T. Sato, H. Hanafusa, and S. Higashi | Jpn. J. Appl. Phys. | 61 | SC1011-1 - SC1011- 6 | 2022 |
| Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging | Keiya Fujimoto, Hiroaki Hanafusa, Takuma Sato and Seiichiro Higashi | Applied Physics Express | 15 | 026502-1 - 026502-4 | 2022 |
2021
| Title | Authors | Journal | Volume | Pages | Year |
| Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT) | Seiichiro Higashi, Kotaro Matsuguchi, Takuma Sato and Hiroaki Hanafusa | 2021 ECS Trans | 104 | 63-68 | 2021 |
| Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on Si | T. Ishibe, J. Chikada, T. Terada, Y. Komatsubara, R. Kitaura, S. Yachi, Y. Yamashita, T. Sato, T. Suemasu, and Y. Nakamura | Appl. Phys. Lett. | 119 | 141603-1 – 141603-6 | 2021 |
| Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication | H. T. K. Nguyen, H. Hanafusa, R. Kawakita, K. Segawa, T. Sato S. Higashi | Jpn. J. Appl. Phys. | 60 | 105502-1 - 105502-7 | 2021 |
| Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam | Kazuki Segawa, Hiroaki Hanafusa, Yuri Mizukawa and Seiichiro Higashi | Jpn. J. Appl. Phys. | 59 | SJJF01-1 - SJJF01-6 | 2021 |
| Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet | H. T. K. NGUYEN, H. Hanafusa, Y. Mizukawa, S. Hayashi, S. Higashi | Materials Science in Semiconductor Processing | 121 | 105357-1 - 105357-9 | 2021 |
2020
| Title | Authors | Journal | Volume | Pages | Year |
| Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing | A. Kameda, Y. Mizukawa, H. Hanafusa, and S. Higashi | J. Appl. Phys. | 127 | 203302-1 - 203302-9 | 2020 |
| Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopy | H. Hanafusa, D. Todo, and S. Higashi | Surface Science | 696 | 121592-1 - 121592-5 | 2020 |
| Development of high yield layer transfer process of single crystalline silicon thin films on plastic substrate and its application to multi-functional devices integration | T. Hirano, F. Kondo, S. Nagasawa, H. Hanafusa, Y. Mizukawa, and S. Higashi | Jpn. J. Appl. Phys. | 59 | SGGJ02-1 - SGGJ02-8 | 2020 |
| In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation | Y. Mizukawa, A. Kameda, H. Hanafusa, and S. Higashi | Appl. Phys. Express | 13 | 015507-1 - 015507-5 | 2020 |
2019
| Title | Authors | Journal | Volume | Pages | Year |
| Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer | R. Mizukami, T. Yamashita, H. Hanafusa, and S. Higashi | IEEE J. Electron Dev. Soc. | 7 | 943-948 | 2019 |
2018
| Title | Authors | Journal | Volume | Pages | Year |
| Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect | H. Hanafusa, R. Nakashima, W. Nakano, and S. Higashi | Jpn. J. Appl. Phys. | 57 | 06JH01-1 - 06JH01-4 | 2018 |
2017
| Title | Authors | Journal | Volume | Pages | Year |
| Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films | R. Nakashima, R. Shin, H. Hanafusa, and S. Higashi | Jpn. J. Appl. Phys. | 56 | 06HE05-1 - 06HE05-4 | 2017 |
| High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet | H. Hanafusa, R. Ishimaru, and S. Higashi | Jpn. J. Appl. Phys. | 56 | 040304-1 - 040304-3 | 2017 |
2015
| Title | Authors | Journal | Volume | Pages | Year |
| Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass | M. Akazawa, K. Sakaike, and S. Higashi | Jpn. J. Appl. Phys. | 54 | 086503-1 - 086503-7 | 2015 |
| High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer | Keisuke Maruyama, Hiroaki Hanafusa, Ryuhei Ashihara, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi | Jpn. J. Appl. Phys. | 54 | 06GC01-1 - 06GC01-8 | 2015 |
| Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis | Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi | Mat. Sci. Forum | 821 | 391-394 | 2015 |
| Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates | K. Sakaike, M. Akazawa, A. Nakagawa and S. Higashi | Jpn. J. Appl. Phys. | 54 | 04DA08-1 - 04DA08-5 | 2015 |
| Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate | K. Tanaka, S. Hayashi, S. Morisaki, and S. Higashi | Jpn. J. Appl. Phys. | 54 | 01AE05-1 - 01AE05-5 | 2015 |
2014
| Title | Authors | Journal | Volume | Pages | Year |
| Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips | S. Morisaki, S. Hayashi, Y. Fujita, and S. Higashi | J. Display Technol. | 10 | 950-955 | 2014 |
| Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique | K. Sakaike, M. Akazawa, A. Nakagawa, and S. Higashi | ECS Trans. | 64 | 17-22 | 2014 |
| Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics | S. Morisaki, S. Hayashi, S. Yamamoto, T. Nakatani, and S. Higashi | ECS Trans. | 64 | 23-29 | 2014 |
| Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100) | H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi | ECS Trans. | 64 | 423-429 | 2014 |
| Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique | M. Akazawa, K. Sakaike, S. Nakamura, and S. Higashi | Jpn. J. Appl. Phys. | 53 | 108002-1 - 108002-3 | 2014 |
| A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser | K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, and S. Higashi | Jpn. J. Appl. Phys. | 53 | 040303-1 - 040303-4 | 2014 |
| Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer | H. Hanafusa, A. Ohta, R. Ashihara, K. Maruyama, T. Mizuno, S. Hayashi, H. Murakami, and S. Higashi | Mat. Sci. Forum | 778-780 | 649-652 | 2014 |
| Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation | S. Hayashi, S. Morisaki, T. Kamikura, S. Yamamoto, K. Sakaike, M. Akazawa, and S. Higashi | Jpn. J. Appl. Phys. | 53 | 03DG02-1 - 03DG02-6 | 2014 |
| Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force | K. Sakaike, S. Nakamura, M. Akazawa, and S. Higashi | Jpn. J. Appl. Phys. | 53 | 018004-1 - 018004-3 | 2014 |
2013
| Title | Authors | Journal | Volume | Pages | Year |
| Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force | K. Sakaike, M. Akazawa, S. Nakamura and S. Higashi | Appl. Phys. Lett. | 103 | 233510-1 - 233510-4 | 2013 |
| Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots | K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, and S. Miyazak | Jpn. J. Appl. Phys. | 52 | 11NA04-1 - 11NA04-3 | 2013 |
| Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes | A. Ohta, M. Fukushima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 52 | 11NJ06-1 - 11NJ06-5 | 2013 |
| Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes | A. Ohta, K. Makihara, M. Fukushima, H. Murakami, S. Higashi, and S. Miyazaki | ECS Trans. | 58 | 293-300 | 2013 |
| Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabricatio | K. Sakaike, Y. Kobayashi, S. Nakamura, S. Hayashi, M. Akazawa, S. Morisaki, M. Ikeda, and S. Higashi | Jpn. J. Appl. Phys. | 52 | 05EC01-1 - 05EC01-6 | 2013 |
| Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films | S. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, and S. Higashi | Jpn. J. Appl. Phys. | 52 | 05EE02-1 - 05EE02-6 | 2013 |
| Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior | A. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki | IEICE Trans. on Electron. | E96-C | 702-707 | 2013 |
| Control of Interfacial Reaction of HfO2 /Ge Structure by Insertion of Ta Oxide Layer | K. Hashimoto, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki | IEICE Trans. on Electron. | E96-C | 674-679 | 2013 |
| XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100) | A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. Jpn. | 38 | 353-357 | 2013 |
| Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System | A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki | J. Phys. Conf. Ser. | 417 | 012012-1 - 012012-6 | 2013 |
| Kinetics of thermally oxidation of Ge(100) surface | S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi, and S. Miyazaki | J. Phys, Conf. Ser. | 417 | 012014-1 - 012014-6 | 2013 |
| Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods | K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi, and S. Miyazaki | J. Phys, Conf. Ser. | 417 | 012013-1 - 012013-6 | 2013 |
2012
| Title | Authors | Journal | Volume | Pages | Year |
| Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation | S. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, M. Ikeda, H. Hanafusa, and S. Higashi | Appl. Phys. Lett. | 101 | 172111-1 - 172111-4 | 2012 |
| Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks | Y. Fujita, S. Hayashi, K. Sakaike, and S. Higashi | ECS Trans. | 50 | 29-34 | 2012 |
| Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation | K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, M. Ikeda and S. Higashi | ECS Trans. | 50 | 43-48 | 2012 |
| Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion | A. Ohta, M. Matsui, H. Murakami, S. Higashi, and S. Miyazaki | ECS Trans. | 50 | 449-457 | 2012 |
| Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes | A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 51 | 06FF02-1 - 06FF02-6 | 2012 |
| Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation | Y. Kobayashi, K. Sakaike, S. Nakamura, M. Ikeda, A. Ohta, and S. Higashi | Mat. Res. Soc.Symp.Proc. | 1426 | 275-280 | 2012 |
| Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering | A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E95-C | 879-884 | 2012 |
| Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy | H. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, and Y. Suda | Jpn. J. Appl. Phys. | 51 | 055502-1 - 055502-4 | 2012 |
| Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique | Y. Fujita, S. Hayashi, and S. Higashi | Jpn. J. Appl. Phys. | 51 | 02BH05-1 - 02BH05-5 | 2012 |
2011
| Title | Authors | Journal | Volume | Pages | Year |
| X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide | A. Ohta, T. Fujioka, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 10PE01-1 - 10PE01-6 | 2011 |
| Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed Oxide | A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 10PH02-1 - 10PH02-6 | 2011 |
| Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory | K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 08KE06-1 - 08KE06-4 | 2011 |
| Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy | M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi, and S. Miyazaki | Microelec. Eng. | 88 | 1549-1552 | 2011 |
| Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics | G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, and S. Miyazaki | Microelec. Eng | 88 | 1152-1154 | 2011 |
| Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities | A. Ohta, D. Kanme, H. Murakaimi, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E94-C | 717-723 | 2011 |
| Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure | G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E94-C | 699-704 | 2011 |
| The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics | A. Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 06GG01-1 - 06GG01-5 | 2011 |
| Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation | K. Matsumoto, A. Ohta, S. Miyazaki, and S. Higashi | Jpn. J. Appl. Phys. | 50 | 04DA07-1 - 04DA07-4 | 2011 |
| Native Oxidation Growth on Ge (111) and (100) Surfaces | S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 04DA12-1 - 04DA12-4 | 2011 |
| Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication | S. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 50 | 03CB10-1 - 03CB10-8 | 2011 |
2010
| Title | Authors | Journal | Volume | Pages | Year |
| Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals | H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. Miyazaki | ECS Trans. | 33 | 253-262 | 2010 |
| Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid | T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa, and S. Miyazaki | ECS Trans. | 33 | 165-170 | 2010 |
| Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing | Y. Hiroshige, S. Higashi, K. Matsumoto, and S. Miyazaki | Jpn. J. Appl. Phys. | 49 | 08JJ01-1 - 08JJ01-4 | 2010 |
| Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication | S. Hayashi, S. Higashi, H. Murakami, and S. Miyazaki | Appl. Phys. Express | 3 | 061401-1 - 061401-3 | 2010 |
| Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation | K. Matsumoto, S. Higashi, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 49 | 04DA02-1 - 04DA02-4 | 2010 |
| Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique | S. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. Miyazaki | Jpn. J. Appl. Phys. | 49 | 03CA08-1 - 03CA08-4 | 2010 |
| Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure | K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki | J. Optoelectronics and Advanced Materials | 12 | 626-630 | 2010 |
| Effect of chemical composition of SiOx films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiation | T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige, and S. Miyazaki | Phys. Status Solidi | C7 | 732-734 | 2010 |
2009
| Title | Authors | Journal | Volume | Pages | Year |
| Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories | K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E92-C | 616-619 | 2009 |
| Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100) | A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki | Microelec. Eng. | 84 | 1650-1653 | 2009 |
| Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique | K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, and S. Miyazaki | Trans. MRS-J. | 34 | 309-312 | 2009 |
| Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 surface | S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, and S. Miyazaki | ECS Trans. | 19 | 35-43 | 2009 |
| Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power- Density Thermal Plasma Jet Irradiation and Its application to UltraShallow Junction Formation | H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 48 | 04C011-1 - 04C011-4 | 2009 |
2008
| Title | Authors | Journal | Volume | Pages | Year |
| Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 | T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki | Thin Solid Films | 517 | 216-218 | 2008 |
| Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory | T. Okada, S. Higashi, H. Kaku, H. Furukawa, and S. Miyazaki | ECS Trans. | 16 | 177-182 | 2008 |
| Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 | K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki | ECS. Trans. | 16 | 255-260 | 2008 |
| Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique | T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, and M. Kondo | Jpn. J. Appl. Phys. | 47 | 6949-6952 | 2008 |
| Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics | K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki | Thin Solid Films | 517 | 306-308 | 2008 |
| In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing | H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki | ECS Trans. | 13 | 31-36 | 2008 |
| Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics | K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 47 | 3099-3102 | 2008 |
| Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases | R. Matsumoto, M. Ikeda, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 47 | 3103-3106 | 2008 |
| In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation | H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 47 | 2460-2463 | 2008 |
| Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jet | T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki | Thin Solid Films | 516 | 3680-3683 | 2008 |
| Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing | K. Sakaike, S. Higashi, H. Kaku, T. Sakata, H. Murakami, and S. Miyazaki | Thin Solid Films | 516 | 3595-3600 | 2008 |
| Nucleation Study of Hydrogenated Microcrystalline Silicon (mc-Si:H) Films Deposited by VHF-ICP | T. Karakawa, S. Higashi, H. Murakami, and S. Miyazaki | Thin Solid Films | 516 | 3497-3501 | 2008 |
| Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet | T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, and S. Miyazaki | Solid-State Electronics | 52 | 377-380 | 2008 |
| Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO2 Structure as Evaluated by AFM/KFM | K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E91-C | 712-715 | 2008 |
2007
| Title | Authors | Journal | Volume | Pages | Year |
| Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots | J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, and S. Miyazaki | Solid State Phenomena | 121-123 | 557-560 | 2007 |
| Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique | R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki | Mat. Sci. Forum | 561-565 | 1213-1216 | 2007 |
| Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack | A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara | Microelec. Eng | 84 | 2386-2389. | 2007 |
| High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2 | T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki | Mat. Sci. Forum | 561-565 | 1209-1212 | 2007 |
| Electrical Characteristics of Lightly-Doped Si Films Crsytallized by Thermal Plasma Jet Irradiation | T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki, and T. Sameshima | Trans. Mat. Res. Soc. Jpn. | 32 | 465-468 | 2007 |
| Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation | K. Sakaike, S. Higashi, H. Kaku, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 46 | 4897-4900 | 2007 |
| Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet | T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki | Thin Solid Films | 515 | 4897-4900 | 2007 |
2006
| Title | Authors | Journal | Volume | Pages | Year |
| Pulsed Laser Annealing of Thin Silicon Films | T. Sameshima, H. Watakabe, N. Andoh, and S. Higashi | Jpn. J. Appl. Phys. | 45 | 2437-2440 | 2006 |
| Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation | S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki | Jpn. J. Appl. Phys. | 45 | 4313-4320 | 2006 |
| Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate | T. Okada, S. Higashi, H. Kaku, H. Murakami, and S. Miyazaki | Jpn. J. Appl. Phys. | 45 | 4355-4357 | 2006 |
| Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique | H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh and T. Sameshima | Trans. Mat. Res. Soc. Jpn. | 30 | 283-286 | 2006 |
| In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure | A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, and T. Sameshima | Thin Solid Films | 508 | 53-56 | 2006 |
| Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe | K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki | Thin Solid Films | 508 | 186-189 | 2006 |
| Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique | J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki | Thin Solid Films | 508 | 190-194 | 2006 |
| Study of Charged States of Si Quantum Dots with Ge Core | K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki | Electrochem. Soc. Trans. | 3 | 257-262 | 2006 |
| Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices | K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. Jpn. | 31 | 133-136 | 2006 |
| Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs | T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. Jpn. | 31 | 137-140 | 2006 |
| Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy | Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. Jpn. | 31 | 145-148 | 2006 |
| Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience | H. Nakagawa, A. Ohta, M. Taira, H. Abe. H. Murakami, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. | 31 | 153-156 | 2006 |
| Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties | H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi, and S. Miyazaki | Trans. Mat. Res. Soc. Jpn. | 31 | 157-160 | 2006 |
| Photoemission Study of Ultrathin HfSiON/Si(100) Systems | A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara | Trans. Mat. Res. Soc. Jpn. | 31 | 125-128 | 2006 |
| Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation | A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki | J. of Surf. Sci. and Nanotech. | 4 | 174-179 | 2006 |
| Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 | T. Sakata, K. Makihara, S. Higashi, and S. Miyazaki | Thin Solid Films | 515 | 4971-4974 | 2006 |
2005
| Title | Authors | Journal | Volume | Pages | Year |
| Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors | Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, and K. Torii | Trans. Mat. Res. Soc. Jpn. | 30 | Trans. Mat. Res. Soc. Jpn. | 2005 |
| Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor | S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando, and T. Sameshima | Jpn. J. Appl. Phys. | 44 | L108-L110 | 2005 |
| Crystallization of Si films on glass substrate using thermal plasma jet | S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, and S. Miyazaki | Thin Solid Films | 487 | 122-125 | 2005 |
| Pulsed Laser Crystallization of Very Thin Silicon Films | T. Sameshima, H. Watakabe, N. Andoh and S. Higashi | Thin Solid films | 487 | 63-66 | 2005 |
| A new crystallization technique of Si flms on glass substrate using thermal plasma Jet | H. Kaku, S. Higashi, H. Taniguchi, H. Murakami, and S. Miyazaki | Appl. Surface Sci. | 244 | 8-11 | 2005 |
| Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment | K. Makihara, H. Deki, H. Murakami, S. Higashi, and S. Miyazaki | Appl. Surface Sci. | 244 | 75-78 | 2005 |
| Influence of substrate dc bias on crystallinity of silicon Films grown at a high rate from inductively-coupled plasma CVD | N. Kosku, H. Murakami, S. Higashi and S. Miyazaki | Appl. Surface Sci. | 244 | 39-42 | 2005 |
| Formation of Microcrystalline Germanium (μc-Ge:H) Films from Inductively-Coupled Plasma CVD | Y. Okamoto, K. Makihara, S. Higashi and S. Miyazaki | Appl. Surface Sci. | 244 | 12-15 | 2005 |
| Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate | H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E88-C | 646-650 | 2005 |
| Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack | Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, and Y. Nara | Electrochem. Soc. Trans. | 1 | 163-172 | 2005 |
| Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique | K. Makihara, Y. Okamoto, H. Murakami, S. Higashi, and S. Miyazaki | IEICE Trans. Electron. | E88-C | 705-708 | 2005 |
2004
| Title | Authors | Journal | Volume | Pages | Year |
| Single-grain Si TFTs with ECR-PECVD gate SiO2 | R. Ishihara, Y. Hiroshima, D. Abe, B.D. van Dijk, P.C. van der Wilt, S. Higashi, S. Inoue, T. Shimoda, J.W. Metselaar, and C.I.M. Beenakker | IEEE Trans. Electron Devices | 51 | 500-502 | 2004 |
| Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100) | H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi, and S. Miyazaki | Jpn. J. Appl. Phys. | 43 | 7890-7894 | 2004 |
| Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100) | A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii, and S. Miyazaki | Jpn. J. Appl. Phys. | 43 | 7831-7836 | 2004 |
| Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe | K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki | Thin Solid Films | 457 | 103-108 | 2004 |